AP60T10GP-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP60T10GS/P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP60T10GP)
are available for low-profile applications.
BV_DSS
R_DS(ON)
I_D
G
D
S
100V
18mΩ
67A
TO-220(P)
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Single Pulse Avalanche Energy³
Storage Temperature Range
Operating Junction Temperature Range
GD _S
Rating
100
+20
67
42
250
167
288
-55 to 150
-55 to 150
TO-263(S)
Units
V
V
A
A
A
W
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Value
0.75
40
62
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
201011024