English
Language : 

AP60T03GI-HF Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Performance
Advanced Power
Electronics Corp.
AP60T03GI-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Performance
▼ Simple Drive Requirement
▼ Full Isolation Package
▼ RoHS Compliant & Halogen-Free
D
BVDSS
30V
RDS(ON)
12mΩ
G
ID
45A
S
Description
AP60T03 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220CFM package is widely preferred for all
commercial-industrial through hole applications. The mold
compound provides a high isolation voltage capability and low
thermal resistance between the tab and the external heat-sink.
GD S
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30
V
+20
V
45
A
32
A
120
A
37.5
W
-55 to 175
℃
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
4
65
Units
℃/W
℃/W
1
201409031