AP60SL380AH Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP60SL380AH
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% R_g & UIS Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP60SL380A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
V_DS @ T_j,max.
R_DS(ON)
I_D3
650V
0.38Ω
10A
G
D
S
TO-252(H)
Absolute Maximum Ratings@T_j=25^o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
600
V
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
Gate-Source Voltage
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V³
Pulsed Drain Current¹
+20
V
10
A
6.5
A
24
A
dv/dt
MOSFET dv/dt Ruggedness (V_DS = 0 …400V )
50
P_D@T_C=25℃
Total Power Dissipation
78.1
P_D@T_A=25℃
Total Power Dissipation⁴
2
E_AS
Single Pulse Avalanche Energy⁵
75
dv/dt
Peak Diode Recovery dv/dt⁶
15
V/ns
W
W
mJ
V/ns
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient⁴
Value
1.6
62.5
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201505271