AP4957GM-HF Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP4957GM-HF
Halogen-Free Product
DUAL P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low On-Resistance
▼ Simple Drive Requirement
▼ Dual P MOSFET Package
▼ RoHS Compliant & Halogen-Free
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Description
AP4957 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
G1
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
BV_DSS
R_DS(ON)
I_D
D1
G2
S1
-30V
24mΩ
-7.7A
D2
S2
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
. _Parameter
Rating
Units
V_DS
Drain-Source Voltage
-30
V
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Gate-Source Voltage
Drain Current³, V_GS @ 10V
Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
V
-7.7
A
-6.1
A
-30
A
2
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201409022