AP4813GSM-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP4813GSM-HF
Halogen-Free Product
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
▼ Simple Drive Requirement
▼ Good Recovery Time
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
Description
D
D
D
D
SO-8
G
S
S
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BV_DSS
R_DS(ON)
I_D
D
30V
9mΩ
13A
Schottky Diode
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
V_KA
I_F@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Schottky Reverse Voltage
Continous Forward Current
I_FM
Pulsed Diode Forward Current
P_D@T_A=25℃
Max Power Dissipation (MOSFET)
Max Power Dissipation (Schottky)
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
13
10.6
50
30
1
25
2.5
2.0
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³(MOSFET)
Maximum Thermal Resistance, Junction-ambient³(Schottky)
Value
50
60
Units
V
V
A
A
A
V
A
A
W
W
℃
℃
Unit
℃/W
℃/W
Data and specifications subject to change without notice
1
200910301