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AP4578GM-HF_14 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
Advanced Power
Electronics Corp.
AP4578GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant
Description
D2
D2
D2
D1 D2
D1 D1
D1
SSOO--88
G2
S2G2
S1
S1
GG11
S2
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D1
60V
64mΩ
4.5A
-60V
125mΩ
-3A
D2
The SO-8 package is widely preferred for all commercial-industrial G1
G2
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
60
-60
±20
±20
4.5
-3
3.6
-2.4
20
-20
2.0
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
62.5
Units
V
V
A
A
A
W
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200805191