AP4578GH_11 Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Good Thermal Performance

Advanced Power
Electronics Corp.
AP4578GH
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D1/D2
▼ Good Thermal Performance
▼ Fast Switching Performance
S1
G1
S2
G2
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
60V
72mΩ
9A
-60V
125mΩ
-6A
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
60
-60
+25
+25
9
-6
6
-4
30
-30
8.9
0.07
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case³
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
14
110
Units
℃/W
℃/W
1
201108113