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AP4578GH Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power
Electronics Corp.
AP4578GH
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
DeS1scription
D1/D2
S1
G1
S2
G2
TO-252-4L
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G1
G2
S1
60V
72mΩ
9A
-60V
125mΩ
-6A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case3
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
60
-60
±25
±25
9
-6
6
-4
30
-30
8.9
0.07
-55 to 150
-55 to 150
Max.
Max.
Value
14
110
Units
V
V
A
A
A
W
W/℃
℃
℃
Units
℃/W
℃/W
Data and specifications subject to change without notice
200218051