AP4563GH Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP4563GH
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant
De_S1scription
D1/D2
S1
G1 _S2
G2
TO-252-4L
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
N-CH
P-CH
G1
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
G2
S1
40V
30mΩ
30A
-40V
36mΩ
-27A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c (N-CH)
Rthj-c (P-CH)
Rthj-a
Parameter
Thermal Resistance Junction-case³
Thermal Resistance Junction-case³
Thermal Resistance Junction-ambient³
Rating
N-channel
P-channel
40
-40
±20
±20
30
-27
19
-17
100
-100
39
-41.7
0.31
-0.34
-55 to 150
-55 to 150
Max.
Max.
Max.
Value
3.2
3
110
Units
V
V
A
A
A
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
200617051-1/7