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AP4563GH-HF_16 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – Fast Switching Performance | |||
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Advanced Power
Electronics Corp.
AP4563GH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
â¼ Simple Drive Requirement
â¼ Good Thermal Performance
D1/D2 N-CH
â¼ Fast Switching Performance
â¼ RoHS Compliant
S1
G1 S2
G2
P-CH
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
40V
30mΩ
8A
-40V
36mΩ
-7.3A
D2
G1
G2
S1
S2
Absolute Maximum Ratings@Tj=25oC.(unless otherwise specified)
Symbol
Parameter
Rating
N-channel
P-channel
VDS
Drain-Source Voltage
40
-40
VGS
ID@TC=25â
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Gate-Source Voltage
Drain Current , VGS @ 10V
Drain Current3 , VGS @ 10V
Drain Current3 , VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
+20
+20
30
-27
8.0
-7.3
6.3
-5.9
40
-40
3.13
Linear Derating Factor
0.025
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Units
V
V
A
A
A
A
W
W/â
â
â
Thermal Data
Symbol
Rthj-c (N-CH)
Rthj-c (P-CH)
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case3
Maximum Thermal Resistance, Junction-case3
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
3.2
3
40
Units
â/W
â/W
â/W
1
201412194AP
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