AP4563GH-HF Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Good Thermal Performance

Advanced Power
Electronics Corp.
AP4563GH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
D1/D2 ^N-CH
▼ Fast Switching Performance
▼ RoHS Compliant
S1
G1 _S2
G2
P-CH
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
40V
30mΩ
8A
-40V
36mΩ
-7.3A
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel
P-channel
40
-40
+20
+20
30
-27
8.0
-7.3
6.3
-5.9
40
-40
3.13
0.025
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c (N-CH)
Rthj-c (P-CH)
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case³
Maximum Thermal Resistance, Junction-case³
Maximum Thermal Resistance, Junction-ambient³
Value
3.2
3
40
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
201110243