AP4537GYT-HF_16 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – Fast Switching Performance

Advanced Power
Electronics Corp.
AP4537GYT-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D1/D2 _N-CH
▼ Good Thermal Performance
▼ Fast Switching Performance
▼
RoHS
Compliant
&
Halogen-Free
S1
G1
S2
G2
Description
PMPAK^® 3x3
P-CH
AP4537 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G1
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
G2
The PMPAK ^® 3x3 package is special for voltage conversion
S1
application using standard infrared reflow technique with the
backside heat sink to achieve the good thermal performance.
30V
30mΩ
7.3A
-30V
60mΩ
-5.3A
D2
S2
Absolute Maximum Ratings@T_j=25^oC_. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
V_DS
Drain-Source Voltage
30
-30
V
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
Gate-Source Voltage
Drain Current³, V_GS @ 10V
Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
+20
+20
V
7.3
-5.3
A
5.8
-4.2
A
28
-20
A
P_D@T_A=25℃
Total Power Dissipation
2.5
W
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
10
50
Unit
℃/W
℃/W
1
201410062AP