English
Language : 

AP4537GYT-HF_14 Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
Advanced Power
Electronics Corp.
AP4537GYT-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D1/D2
▼ Good Thermal Performance
▼ Fast Switching Performance
▼
RoHS
Compliant
&
Halogen-Free
S1
G1
S2
G2
Description
PMPAK® 3x3
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
The PMPAK® 3x3 package is smaller size and lower 1.0mm profile G1
with backside heat sink.
G2
S1
30V
30mΩ
7.3A
-30V
60mΩ
-5.3A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
30
-30
+20
+20
7.3
-5.3
5.8
-4.2
28
-20
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
10
50
Unit
℃/W
℃/W
1
201009212