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AP4525GEM Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Advanced Power
Electronics Corp.
AP4525GEM
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
â¼ Simple Drive Requirement
â¼ Low On-resistance
â¼ Fast Switching Performance
â¼ RoHS Compliant
D2
D2
D1
D1
SO-8
G2
S2
S1 G1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design,low on-resistance and cost-
effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G1
G2
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
S1
applications such as DC/DC converters.
40V
28mΩ
6A
-40V
42mâ¦
-5A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
40
-40
±16
±16
6.0
-5.0
5.0
-4.0
30
-30
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/â
â
â
Unit
â/W
Data and specifications subject to change without notice
200725064-1/7
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