AP4525GEH-HF_16 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – Fast Switching Performance

Advanced Power
Electronics Corp.
AP4525GEH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
D1/D2
N-CH
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
S1 _G1
S2
G2
P-CH
TO-252-4L
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G1
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
G2
40V
28mΩ
15A
-40V
42mΩ
-12A
D2
S1
S2
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=70℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
40
-40
±16
±16
15.0
-12.0
12.0
-10.0
50
-50
10.4
0.083
V
V
A
A
A
W
W/℃
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
12
110
Unit
℃/W
℃/W
1
201501166