AP4521GEH_14 Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Good Thermal Performance

Advanced Power
Electronics Corp.
AP4521GEH
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant
Description
S1 _G1
S2
G2
D1/D2
TO-252-4L
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
G1
G2
40V
36mΩ
11.7A
-40V
72mΩ
-8.7A
D2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case³
Thermal Resistance Junction-ambient³
Rating
N-channel P-channel
40
-40
±16
±20
11.7
-8.7
7.4
-5.5
50
-40
9
0.07
-55 to 150
-55 to 150
Max.
Max.
Value
14
110
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
℃/W
Data and specifications subject to change without notice
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