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AP4519GED Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Low Gate Charge, Fast Switching Speed, PDIP-8 Package | |||
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Advanced Power
Electronics Corp.
â¼ Low Gate Charge
â¼ Fast Switching Speed
â¼ PDIP-8 Package
â¼ RoHS Compliant
Description
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP4519GED
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
35V
32mΩ
6.2A
-35V
64mΩ
-5.0A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
35
-35
±20
±20
6.2
-5.0
5.0
-4.0
30
-30
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/â
â
â
Unit
â/W
Data and specifications subject to change without notice
201128052-1/7
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