AP4515GM-HF_16 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP4515GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
N-CH
G2
S2
P-CH
G1
S1
Description
AP4515 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power G1
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
G2
S1
35V
22mΩ
7.7A
-35V
40mΩ
-5.7A
D2
S2
Absolute Maximum Ratings@T_j=25^o_.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
V_DS
Drain-Source Voltage
35
-35
V
V_GS
I_D@T_A=25℃
Gate-Source Voltage
Drain Current³, V_GS @ 10V
+20
+12
V
7.7
-5.7
A
I_D@T_A=70℃
I_DM
Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
6.2
-4.6
A
30
-30
A
P_D@T_A=25℃
Total Power Dissipation
2.0
W
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201409021