AP4513GM Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP4513GM
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
▼ RoHS Compliant
Description
D2
D2 ^D2
D1 ^D2
D1 ^D1
D1
SSOO--88
G2
S2G2
G1 ^S2
S1
S1
G1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
G1
G2
S1
35V
36mΩ
5.8A
-35V
68mΩ
-4.3A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
E_AS
I_AR
E_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy⁴
Avalanche Current
Repetitive Avalanche Energy¹
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
N-channel P-channel
35
-35
±20
±20
5.8
-4.3
4.7
-3.4
20
-20
2
0.016
12.5
12.5
5
-5
0.05
0.05
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
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