AP4513GM-HF_16 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – Fast Switching Performance

Advanced Power
Electronics Corp.
AP4513GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
N-CH
G2
S2
P-CH
G1
S1
Description
AP4513 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
35V
36mΩ
5.8A
-35V
68mΩ
-4.3A
D2
The SO-8 package is widely preferred for all commercial-
G1
G2
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
S1
S2
applications.
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
E_AS
I_AR
E_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy⁴
Avalanche Current
Repetitive Avalanche Energy¹
Storage Temperature Range
Operating Junction Temperature Range
35
-35
+20
+20
5.8
-4.3
4.7
-3.4
20
-20
2
0.016
12.5
12.5
5
-5
0.05
0.05
-55 to 150
-55 to 150
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201501095