AP4513GH_14 Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Good Thermal Performance

Advanced Power
Electronics Corp.
AP4513GH
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
Description
D1/D2
S1 _G1
S2
G2
TO-252-4L
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
D1
effectiveness.
35V
42mΩ
10A
-35V
75mΩ
-8A
D2
G1
G2
S1
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
35
-35
+20
+20
10
-8
6
-5
50
-50
7.8
0.063
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case³
Maximum Thermal Resistance, Junction-ambient³
Value
16
110
S2
Units
V
V
A
A
A
W
W/℃
℃
℃
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200812293