AP4513GD_14 Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Low Gate Charge

Advanced Power
Electronics Corp.
▼ Low Gate Charge
▼ Fast Switching Speed
▼ PDIP-8 Package
▼ RoHS Compliant
Description
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP4513GD
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
35V
36mΩ
5.8A
-35V
68mΩ
-4.3A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
E_AS
I_AR
E_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy⁴
Avalanche Current
Repetitive Avalanche Energy¹
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
N-channel P-channel
35
-35
±20
±20
5.8
-4.3
4.7
-3.4
20
-20
2
0.016
12.5
12.5
5
-5
0.05
0.05
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
200615051-1/7