AP4511GH Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP4511GH
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
Description
D1/D2
S1
G1
S2
G2
TO-252-4L
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
35V
30mΩ
15A
-35V
48mΩ
-12A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case³
Thermal Resistance Junction-ambient³
Rating
N-channel P-channel
35
-35
±20
±20
15
-12
9
-7
50
-50
10.4
0.083
-55 to 150
-55 to 150
Max.
Max.
Value
12
110
Units
V
V
A
A
A
W
W/℃
℃
℃
Units
℃/W
℃/W
Data and specifications subject to change without notice
200222053