AP4506GEH Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Good Thermal Performance

Advanced Power
Electronics Corp.
AP4506GEH
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
Description
D1/D2
S1 _G1
S2
G2
TO-252-4L
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
G1
G2
30V
24mΩ
9A
-30V
36mΩ
-8A
D2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
30
-30
+20
+20
9
-8
7.2
-6.4
50
-50
3.1
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Value
8
40
Units
V
V
A
A
A
W
℃
℃
Unit
℃/W
℃/W
Data and specifications subject to change without notice
1
200902103