AP4503BGO-HF_16 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP4503BGO-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
30V
23mΩ
6.3A
-30V
35mΩ
-5.2A
D2
G1
G2
S1
S2
Absolute Maximum Ratings@T_j=25^oC_. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
V_DS
Drain-Source Voltage
30
-30
V
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
Gate-Source Voltage
Drain Current³, V_GS @ 10V
Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
+20
+20
V
6.3
-5.2
A
5.0
-4.2
A
20
-20
A
P_D@T_A=25℃
Total Power Dissipation
1.38
W
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
90
Unit
℃/W
1
201501292