AP4501SSD Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4501SSD
Advanced Power
Electronics Corp.
N with Schottky AND P-CHANNEL
ENHANCEMENT MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching
Description
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1/A
The Advanced Power MOSFETs from APEC provide the
design with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
AP4501SSD included N , P channel enhancement mode
power MOSFET and Shottky diode.
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
K
G1
G2
S1
A
30V
36mΩ
5.3A
-30V
60mΩ
-4.2A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
30
-30
±20
±20
5.3
-4.2
4.3
-3.5
40
-30
2
0.016
-55 to 150
-55 to 125
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient³
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
200221031