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AP4501GD_14 Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Low Gate Charge | |||
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Advanced Power
Electronics Corp.
AP4501GD
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
â¼ Low Gate Charge
â¼ Fast Switching Speed
â¼ PDIP-8 Package
D2
D2
D1
D1
â¼ RoHS Compliant
PDIP-8
G2
S2
G1
S1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
28mΩ
7A
-30V
50mΩ
-5.3A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
30
-30
±20
±20
7
-5.3
5.8
-4.7
20
-20
2
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/â
â
â
Unit
â/W
Data and specifications subject to change without notice
200622051-1/7
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