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AP4500GYT-HF_14 Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
Advanced Power
Electronics Corp.
AP4500GYT-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D1/D2
▼ Good Thermal Performance
▼ Fast Switching Performance
▼
RoHS
Compliant
&
Halogen-Free
S1
G1
S2
G2
Description
PMPAK® 3x3
AP4500 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
N-CH
P-CH
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
The PMPAK ® 3x3 is special for voltage conversion application
S1
using standard infrared reflow technique with the backside heat
sink to achieve the good thermal performance.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
20
-20
+12
+12
8.9
-5.3
7.1
-4.3
20
-20
2.5
-55 to 150
-55 to 150
20V
21mΩ
8.9A
-20V
60mΩ
-5.3A
D2
S2
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
10
50
Unit
℃/W
℃/W
1
201206071