AP4439GMT-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP4439GMT-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ SO-8 Compatible
▼ Lower Gate Charge
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP4439 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The PMPAK^® 5x6 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
BV_DSS
R_DS(ON)
I_D
-30V
10mΩ
-58A
D
D
D
D
S
S
S
G
PMPAK^® 5x6
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
. _Parameter
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), V_GS @ 10V
Drain Current³, V_GS @ 10V
Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-30
V
+25
V
-58
A
-18.5
A
-14.8
A
-200
A
50
W
5
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
2.5
25
Unit
℃/W
℃/W
1
201409102AP