AP4436GM_14 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Low on-resistance

Advanced Power
Electronics Corp.
▼ Low on-resistance
▼ Capable of 2.5V gate drive
▼ Surface mount package
Description
D
D
D
D
SO-8
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP4436GM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
S
S
S
BV_DSS
R_DS(ON)
I_D
20V
32mΩ
6.4A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³,V_GS @ 4.5V
Continuous Drain Current³,V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Rating
20
±12
6.4
5.1
30
2
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200805271