AP4434GM Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Low on-resistance, Capable of 2.5V gate drive

Advanced Power
Electronics Corp.
▼ Low on-resistance
▼ Capable of 2.5V gate drive
▼ Surface mount package
Description
D
D
D
D
SO-8
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP4434GM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
S
S
S
BV_DSS
R_DS(ON)
I_D
20V
18.5mΩ
8.3A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³,V_GS @ 4.5V
Continuous Drain Current³,V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
20
±12
8.3
6.7
30
2
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
200607072-1/4