AP4434AGM-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Capable of 1.8V Gate Drive

Advanced Power
Electronics Corp.
AP4434AGM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Capable of 1.8V Gate Drive
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
G
SS
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
BV_DSS
R_DS(ON)
I_D
G
20V
22mΩ
8.7A
D
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 4.5V
Continuous Drain Current³, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
T_J
Operating Junction Temperature Range
Rating
20
+8
8.7
7
30
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
50
Unit
℃/W
1
201106131