|
AP4412GM_14 Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement | |||
|
Advanced Power
Electronics Corp.
AP4412GM
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Low Gate Charge
â¼ Simple Drive Requirement
â¼ Fast Switching
â¼ RoHS Compliant
Description
D
D
D
D
SO-8
G
S
S
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
25V
33mΩ
7A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
25
±20
7
5.8
30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Max.
Value
50
Unit
â/W
Data and specifications subject to change without notice
200415051-1/6
|
▷ |