AP4409GEP-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Low On-resistance, Simple Drive Requirement, Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP4409GEP-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
BV_DSS
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
R_DS(ON)
I_D
S
Description
AP4409 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
G
D
S
The TO-220 package is widely preferred for all commercial-industrial
through hole applications. The low thermal resistance and low package
cost contribute to the worldwide popular package.
-35V
8.2mΩ
-80A
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-35
+20
-80
-50
-280
83.3
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.5
62
Units
℃/W
℃/W
1
201203121