AP4407GS Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Lower On-resistance, Simple Drive Requirement

Advanced Power
Electronics Corp.
AP4407GS/P
RoHS-compliat Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP4407GP) are
available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
BV_DSS
R_DS(ON)
I_D
GD
S
G
D
S
Rating
-30
+25
-50
-32
180
54
0.4
-55 to 150
-55 to 150
-30V
14mΩ
-50A
TO-263(S)
TO-220(P)
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2.3
62
Unit
℃/W
℃/W
Data and specifications subject to change without notice
1
200808192