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AP4407GR Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Advanced Power
Electronics Corp.
AP4407GR
Pb Free Plating Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Lower On-resistance
D
â¼ Simple Drive Requirement
â¼ Fast Switching Characteristic
G
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
-30V
14mΩ
-50A
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
-30
±25
-50
-32
180
54
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Max.
Max.
Value
2.3
62
Units
â/W
â/W
Data and specifications subject to change without notice
200218051
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