AP4224LGM-HF Datasheet, PDF (1/2 Pages) Advanced Power Electronics Corp. – Low On-Resistance, Capable of 2.5V Gate Drive

Advanced Power
Electronics Corp.
AP4224LGM-HF
Preliminary
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low On-Resistance
▼ Capable of 2.5V Gate Drive
▼ Dual N MOSFET Package
▼ RoHS Compliant & Halogen-Free
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial _G1
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BV_DSS
R_DS(ON)
I_D
D1
G2
S1
20V
14mΩ
10A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+12
10
8
30
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
20110810pre