AP40U03GH Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Lower Gate Charge Simple Drive Requirement

Advanced Power
Electronics Corp.
AP40U03GH
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
D
G
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low□
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
BV_DSS
R_DS(ON)
I_D
30V
25mΩ
20A
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
30
±20
20
14
60
15
0.1
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
10
110
Units
℃/W
℃/W
Data & specifications subject to change without notice
200720071-1/4