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AP40T03GH-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic | |||
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Advanced Power
Electronics Corp.
AP40T03GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Simple Drive Requirement
D
â¼ Low Gate Charge
â¼ Fast Switching Characteristic
G
â¼ RoHS Compliant & Halogen-Free
S
Description
AP40T03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP40T03GJ) are available for low-profile
applications.
BVDSS
RDS(ON)
ID
30V
25mΩ
28A
GD
S
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30
V
+25
V
28
A
18
A
95
A
31.25
W
-55 to 150
â
-55 to 150
â
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4
62.5
110
Units
â/W
â/W
â/W
Data and specifications subject to change without notice
1
201409017
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