AP40P03GP Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Lower Gate Charge Simple Drive Requirement

Advanced Power
Electronics Corp.
AP40P03GP
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial through hole applications and suited for low voltage
applications.
BV_DSS
R_DS(ON)
I_D
G
D
S
-30V
28mΩ
-30A
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
-30
±20
-30
-18
-120
31.3
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
4
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
200731072-1/4