AP40P03GI Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP40P03GI
Pb Free Plating Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On-resistance
D
Simple Drive Requirement
Fast Switching Characteristic
G
RoHS Compliant
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
BV_DSS
R_DS(ON)
I_D
-30V
28m
-30A
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25
I_D@T_C=100
I_DM
P_D@T_C=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
-30
±20
-30
-18
-120
31.3
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
4
62
Units
/W
/W
Data and specifications subject to change without notice
200407062-1/4