AP40N03GP Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Low Gate Charge Simple Drive Requirement

Advanced Power
Electronics Corp.
AP40N03GP
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Description
G
D
S
TO-220
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for all commercial-industrial
applications and suited for low voltage applications such as DC/DC
converters and high efficiency switching circuits.
BV_DSS
R_DS(ON)
I_D
G
30V
17mΩ
40A
D
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
40
30
169
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2.5
62
Unit
℃/W
℃/W
1
200910094