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AP4032GYT-HF Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
Advanced Power
Electronics Corp.
AP4032GYT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP4032 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK ® 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
BVDSS
RDS(ON)
ID
30V
9mΩ
15.5A
D
D
D
D
S
S
S
G
PMPAK® 3 x 3
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30
V
+20
V
15.5
A
12.4
A
60
A
3.57
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
5
35
Unit
℃/W
℃/W
1
201501292