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AP4024EH Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic
Advanced Power
Electronics Corp.
AP4024EH
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP4024 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and □fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance.
BVDSS
RDS(ON)
ID
30V
6mΩ
60A
G
D
S
TO-252(H)
Absolute Maximum Ratings
.
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V, (Chip)
Drain Current, VGS @ 10V, (Chip)
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
60
38
160
36.7
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data & specifications subject to change without notice
Value
3.4
62.5
Units
℃/W
℃/W
1
201407292