AP4002T Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
G
AP4002T
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV_DSS
600V
R_DS(ON)
5Ω
I_D
400mA
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is widely used for commercial-industrial applications.
G
D
S
TO-92
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D@T_L=25℃
I_DM
P_D@T_L=25℃
E_AS
I_AR
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rthj-l
Maximum Thermal Resistance, Junction-lead
Data & specifications subject to change without notice
Rating
600
±30
400
3
2
0.017
20
2
-55 to 150
-55 to 150
Units
V
V
mA
A
W
W/℃
mJ
A
℃
℃
Value
150
60
Unit
℃/W
℃/W
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