AP4002S Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP4002S/P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for power applications.The
through-hole version (AP4002P) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
E_AS
I_AR
T_STG
T_J
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
BV_DSS
R_DS(ON)
I_D
600V
5Ω
2A
G _{D S TO-263(S)}
G
D
S
Rating
600
±30
2
8
20
0.16
20
2
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
W
W/℃
mJ
A
℃
℃
Value
6.25
62
Units
℃/W
℃/W
Data & specifications subject to change without notice
201019072-1/4