|
AP4002H-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristics | |||
|
Advanced Power
Electronics Corp.
â¼ 100% Avalanche Test
â¼ Fast Switching Characteristics
â¼ Simple Drive Requirement
â¼ RoHS Compliant & Halogen-Free
AP4002H/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
RDS(ON)
600V
5Ω
G
ID
2A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP4002J) are
available for low-profile applications.
G
D
S
TO-251(J)
G DS
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
ID@TC=25â
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V
Pulsed Drain Current1
+30
V
2
A
8
A
PD@TC=25â
Total Power Dissipation
20
W
Linear Derating Factor
EAS
Single Pulse Avalanche Energy2
0.16
W/â
20
mJ
IAR
TSTG
TJ
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
2
A
-55 to 150
â
-55 to 150
â
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
6.25
62.5
110
Unit
â/W
â/W
â/W
1
201501295
|
▷ |