AP3R303GMT-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – SO-8 Compatible with Heatsink

Advanced Power
Electronics Corp.
AP3R303GMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
BV_DSS
▼ SO-8 Compatible with Heatsink
R_DS(ON)
▼ Low On-resistance
G
I_D5
▼ RoHS Compliant & Halogen-Free
S
Description
AP3R303 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The
PMPAK ^®
5x6
ppackage
is
special
for
voltage
conversion
application
S
S
using standard infrared reflow technique with the backside heat sink to
S
G
achieve the good thermal performance.
30V
3.3mΩ
105A
D
D
D
D
PMPAK 5x6
Absolute Maximum Ratings@T_j=25^o_.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
E_AS
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), V_GS @ 10V⁵
Drain Current³, V_GS @ 10V
Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy⁴
Storage Temperature Range
Operating Junction Temperature Range
30
V
+20
V
105
A
31
A
25
A
250
A
56.8
W
5
W
28.8
mJ
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Data & specifications subject to change without notice
Value
2.2
25
Units
℃/W
℃/W
1
201410203