AP3990S-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
AP3990S-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV_DSS
600V
R_DS(ON)
0.6Ω
G
I_D
10A
S
Description
AP3990 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-263 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for high current application due to the low
connection resistance.
G _{D S TO-263(S)}
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
600
V
V_GS
I_D@T_C=25℃
Gate-Source Voltage
Drain Current, V_GS @ 10V
+ 30
V
10
A
I_D@T_C=100℃
I_DM
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
6.5
A
40
A
P_D@T_C=25℃
P_D@T_A=25℃
E_AS
Total Power Dissipation
Total Power Dissipation⁴
Single Pulse Avalanche Energy²
174
W
3.13
W
50
mJ
I_AR
Avalanche Current
10
A
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴
Data & specifications subject to change without notice
Value
0.72
40
Unit
℃/W
℃/W
1
201501292