AP3800YT Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP3800YT
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Easy for Synchronous Buck
G1
Converter Application
▼ RoHS Compliant & Halogen-Free
G2
Description
Advanced Power MOSFETs from APEC provide
the designer with the best combination of fast
switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The control MOSFET (CH-1) and synchronous
MOSFET (CH-2) co-package for synchronous buck
converters.
.
D1 _{CH-1 BVDSS}
R_DS(ON)
D2/S1
I_D3
CH-2 BV_DSS
R_DS(ON)
S2
I_D3
30V
10.8mΩ
10.3A
30V
8.5mΩ
12.7A
G2 S2 S2 S2
S1/D2
G2
S2
S2
S2
D1
G1 D1 D1 D1
G1
D1
D1
D1
PMPAK^® 3 x 3
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
CH-1
CH-2
V_DS
Drain-Source Voltage
30
30
V
V_GS
Gate-Source Voltage
+20
+20
V
I_D@T_C=25℃
Drain Current (Chip Limited)
37
44
A
I_D@T_A=25℃
Drain Current³ , V_GS @ 10V
10.3
12.7
A
I_D@T_A=70℃
I_DM
Drain Current³ , V_GS @ 10V
Pulsed Drain Current¹
8.3
10.2
A
40
40
A
P_D@T_A=25℃
Total Power Dissipation³
1.9
2.2
W
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Maximum Thermal Resistance, Junction-ambient⁴
Rating
CH-1
CH-2
5
4.5
65
55
180
145
Units
℃/W
℃/W
℃/W
Data & specifications subject to change without notice
1
201504272